Single FETs, MOSFETs

Results: 6
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedNexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V100 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)170mA (Ta)200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
3.5Ohm @ 220mA, 10V5Ohm @ 200mA, 10V6Ohm @ 170mA, 10V8Ohm @ 150mA, 10V10Ohm @ 100mA, 5V10Ohm @ 130mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 1mA2V @ 250µA2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V30 pF @ 5 V30 pF @ 30 V45 pF @ 25 V50 pF @ 10 V60 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)225mW (Ta)250mW (Tc)350mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23SOT-23-3 (TO-236)SOT-323TO-236AB
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
745,947
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
TO-236AB
BSS84,215
MOSFET P-CH 50V 130MA TO236AB
Nexperia USA Inc.
180,063
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.41963
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
10V
10Ohm @ 130mA, 10V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
250mW (Tc)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3
onsemi
51,336
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.50761
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 250µA
-
±20V
30 pF @ 5 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS123W-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
442,856
In Stock
963,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.40266
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
93,709
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18956
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
BSS84
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
113,338
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26581
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
4.5V, 10V
8Ohm @ 150mA, 10V
2.5V @ 250µA
-
±20V
30 pF @ 30 V
-
225mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.