Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

CSD17308Q3 MOSFET N-CH 30V 14A/44A 8VSON Texas Instruments	29,329 In Stock	1 : ¥7.55000 Cut Tape (CT) 2,500 : ¥2.85948 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	14A (Ta), 44A (Tc)	3V, 8V	10.3mOhm @ 10A, 8V	1.8V @ 250µA	5.1 nC @ 4.5 V	+10V, -8V	700 pF @ 15 V	-	2.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN
BSC070N10NS5ATMA1 MOSFET N-CH 100V 80A TDSON Infineon Technologies	34,718 In Stock	1 : ¥14.53000 Cut Tape (CT) 5,000 : ¥6.31405 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	6V, 10V	7mOhm @ 40A, 10V	3.8V @ 50µA	38 nC @ 10 V	±20V	2700 pF @ 50 V	-	2.5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IPT020N10N3ATMA1 MOSFET N-CH 100V 300A 8HSOF Infineon Technologies	11,514 In Stock	1 : ¥61.66000 Cut Tape (CT) 2,000 : ¥32.77892 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	300A (Tc)	6V, 10V	2mOhm @ 150A, 10V	3.5V @ 272µA	156 nC @ 10 V	±20V	11200 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.