Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesRohm SemiconductorVishay Siliconix
Series
-OptiMOS™-5TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)5A (Ta)17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7V, 10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 31A, 10V27mOhm @ 5A, 10V85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA2.5V @ 250µA3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V20.8 nC @ 10 V40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
940 pF @ 15 V1100 pF @ 20 V1140 pF @ 30 V
Power Dissipation (Max)
1.25W (Ta)3W (Ta), 42W (Tc)3.75W (Tc)
Operating Temperature
-55°C ~ 175°C (TA)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-SOICPG-TDSON-8 FLTSMT6 (SC-95)
Package / Case
8-PowerTDFN8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TSMT6_TSMT6 Pkg
RQ6E050ATTCR
MOSFET P-CH 30V 5A TSMT6
Rohm Semiconductor
13,714
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.57773
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5A (Ta)
4.5V, 10V
27mOhm @ 5A, 10V
2.5V @ 1mA
20.8 nC @ 10 V
±20V
940 pF @ 15 V
-
1.25W (Ta)
150°C (TJ)
-
-
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
8-SOIC
SQ9407EY-T1_GE3
MOSFET P-CHANNEL 60V 4.6A 8SO
Vishay Siliconix
16,926
In Stock
1 : ¥9.36000
Cut Tape (CT)
2,500 : ¥3.85959
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
P-Channel
MOSFET (Metal Oxide)
60 V
4.6A (Tc)
4.5V, 10V
85mOhm @ 3.5A, 10V
2.5V @ 250µA
40 nC @ 10 V
±20V
1140 pF @ 30 V
-
3.75W (Tc)
-55°C ~ 175°C (TA)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
ISC015N04NM5
ISC058N04NM5ATMA1
40V 5.8M OPTIMOS MOSFET SUPERSO8
Infineon Technologies
27,782
In Stock
1 : ¥4.93000
Cut Tape (CT)
5,000 : ¥2.64766
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
17A (Ta), 63A (Tc)
7V, 10V
5.8mOhm @ 31A, 10V
3.4V @ 13µA
16 nC @ 10 V
±20V
1100 pF @ 20 V
-
3W (Ta), 42W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.