Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF7749L1TRPBF MOSFET N-CH 60V 33A DIRECTFET Infineon Technologies	9,667 In Stock	1 : ¥39.74000 Cut Tape (CT) 4,000 : ¥19.34899 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	33A (Ta), 200A (Tc)	10V	1.5mOhm @ 120A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	12320 pF @ 25 V	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric L8	DirectFET™ Isometric L8
IPT012N08N5ATMA1 MOSFET N-CH 80V 300A 8HSOF Infineon Technologies	7,735 In Stock	1 : ¥51.72000 Cut Tape (CT) 2,000 : ¥27.49443 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	300A (Tc)	6V, 10V	1.2mOhm @ 150A, 10V	3.8V @ 280µA	223 nC @ 10 V	±20V	17000 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
DMN2004K-7 MOSFET N-CH 20V 630MA SOT23-3 Diodes Incorporated	21,262 In Stock 1,092,000 Factory	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.66393 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	630mA (Ta)	1.8V, 4.5V	550mOhm @ 540mA, 4.5V	1V @ 250µA	-	±8V	150 pF @ 16 V	-	350mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.