Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedGood-Ark Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V, 4.5V2.5V, 10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V2Ohm @ 50mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.5 nC @ 4.5 V4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V32 pF @ 30 V
Power Dissipation (Max)
150mW (Ta)230mW (Ta)
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMN62D0UT-7
MOSFET N-CH 60V 0.32A SOT523
Diodes Incorporated
2,783
In Stock
2,055,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52275
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
1.8V, 2.5V, 4.5V
2Ohm @ 50mA, 4.5V
1V @ 250A
0.5 nC @ 4.5 V
±20V
32 pF @ 30 V
-
230mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
GSBAT54AT
GSF0500AT
MOSFET, N-CH, SINGLE, 360MA, 50V
Good-Ark Semiconductor
5,965
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.32421
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
360mA (Ta)
2.5V, 10V
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
4.7 nC @ 10 V
±20V
27 pF @ 25 V
-
150mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.