Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138NH6327XTSA2 MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies	104,873 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.54535 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Ta)	4.5V, 10V	3.5Ohm @ 230mA, 10V	1.4V @ 26µA	1.4 nC @ 10 V	±20V	41 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
DMP4025SFGQ-13 MOSFET P-CH 40V 7.2A PWRDI3333-8 Diodes Incorporated	4,589 In Stock 42,000 Factory	1 : ¥4.76000 Cut Tape (CT) 3,000 : ¥1.80575 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	7.2A (Ta)	4.5V, 10V	25mOhm @ 3A, 10V	1.8V @ 250µA	33.7 nC @ 10 V	±20V	1643 pF @ 20 V	-	810mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	POWERDI3333-8	8-PowerVDFN
STD15P6F6AG MOSFET P-CH 60V 10A DPAK STMicroelectronics	10,699 In Stock	1 : ¥7.47000 Cut Tape (CT) 2,500 : ¥3.07861 Tape & Reel (TR)	STripFET™ F6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	10V	160mOhm @ 5A, 10V	4V @ 250µA	6.4 nC @ 10 V	±20V	340 pF @ 48 V	-	35W (Tc)	175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.