Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

TP65H015G5WS 650 V 95 A GAN FET Transphorm	140 In Stock	1 : ¥264.84000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	93A (Tc)	10V	18mOhm @ 60A, 10V	4.8V @ 2mA	100 nC @ 10 V	±20V	5218 pF @ 400 V	-	266W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
NVHL025N65S3 MOSFET N-CH 650V 75A TO247-3 onsemi	268 In Stock 1,800 Factory	1 : ¥171.74000 Tube	SuperFET® III	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	25mOhm @ 37.5A, 10V	4.5V @ 3mA	236 nC @ 10 V	±30V	7330 pF @ 400 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
STWA65N023M9 N-CHANNEL 650 V, 19.9 MOHM TYP., STMicroelectronics	636 In Stock This product has a maximum purchase limit	1 : ¥164.52000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	95A (Tc)	10V	23mOhm @ 48A, 10V	4.2V @ 250µA	230 nC @ 10 V	±30V	8844 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads	TO-247-3
IPWS65R022CFD7AXKSA1 AUTOMOTIVE_COOLMOS PG-TO247-3 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥128.23000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	96A (Tc)	10V	22mOhm @ 58.2A, 10V	4.5V @ 2.91mA	234 nC @ 10 V	±30V	11659 pF @ 400 V	-	446W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-31	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.