Single FETs, MOSFETs

Results: 5
Manufacturer
onsemiSTMicroelectronicsVishay Siliconix
Series
-PowerTrench®STripFET™TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)4.4A (Ta), 22A (Tc)37A (Tc)55A (Tc)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 60A, 10V14mOhm @ 10A, 10V47.5mOhm @ 10A, 10V53mOhm @ 4.4A, 10V155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 4.5 V48 nC @ 10 V63 nC @ 10 V130 nC @ 10 V160 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 25 V1805 pF @ 75 V3905 pF @ 75 V4500 pF @ 25 V11550 pF @ 25 V
Power Dissipation (Max)
900mW (Ta)2.5W (Ta), 104W (Tc)68W (Tc)104W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PQFN (5x6)H2PAK-2PowerPAK® SO-8SOT-23-3 (TO-236)
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR5198NLT1G
MOSFET N-CH 60V 1.7A SOT23-3
onsemi
117,816
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.70799
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.7A (Ta)
4.5V, 10V
155mOhm @ 1A, 10V
2.5V @ 250µA
2.8 nC @ 4.5 V
±20V
182 pF @ 25 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-PQFN
FDMS86263P
MOSFET P-CH 150V 4.4A/22A 8PQFN
onsemi
4,677
In Stock
1 : ¥24.14000
Cut Tape (CT)
3,000 : ¥11.74694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
4.4A (Ta), 22A (Tc)
6V, 10V
53mOhm @ 4.4A, 10V
4V @ 250µA
63 nC @ 10 V
±25V
3905 pF @ 75 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
PowerPak SO-8L
SQJ423EP-T1_GE3
MOSFET P-CH 40V 55A PPAK SO-8
Vishay Siliconix
17,263
In Stock
1 : ¥8.87000
Cut Tape (CT)
3,000 : ¥3.66040
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
55A (Tc)
4.5V, 10V
14mOhm @ 10A, 10V
2.5V @ 250µA
130 nC @ 10 V
±20V
4500 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥12.89000
Cut Tape (CT)
3,000 : ¥5.80636
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
37A (Tc)
10V
47.5mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1805 pF @ 75 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
H2PAK
STH240N10F7-2
MOSFET N-CH 100V 180A H2PAK-2
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥33.41000
Cut Tape (CT)
1,000 : ¥17.26021
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.5mOhm @ 60A, 10V
4.5V @ 250µA
160 nC @ 10 V
±20V
11550 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.