Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF9540NPBF MOSFET P-CH 100V 23A TO220AB Infineon Technologies	2,478 In Stock	1 : ¥11.41000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF5210PBF MOSFET P-CH 100V 40A TO220AB Infineon Technologies	7,430 In Stock	1 : ¥19.78000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	40A (Tc)	10V	60mOhm @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	2700 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTH52P10P MOSFET P-CH 100V 52A TO247 Littelfuse Inc.	300 In Stock	1 : ¥66.99000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH76P10T MOSFET P-CH 100V 76A TO247 Littelfuse Inc.	3,195 In Stock	1 : ¥44.74000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	76A (Tc)	10V	25mOhm @ 38A, 10V	4V @ 250µA	197 nC @ 10 V	±15V	13700 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTP52P10P MOSFET P-CH 100V 52A TO220AB Littelfuse Inc.	381 In Stock 400 Factory	1 : ¥52.87000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTH24P20 MOSFET P-CH 200V 24A TO247 Littelfuse Inc.	0 In Stock 630 Factory Check Lead Time	1 : ¥96.38000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	150mOhm @ 500mA, 10V	5V @ 250µA	150 nC @ 10 V	±20V	4200 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
G900P15T P-150V,-60A,RD(MAX)<80M@-10V,VTH Goford Semiconductor	25 In Stock	1 : ¥12.64000 Tube	TrenchFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	80mOhm @ 5A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	3932 pF @ 75 V	-	198W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FQA36P15 MOSFET P-CH 150V 36A TO3PN onsemi	0 In Stock	Active	QFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	90mOhm @ 18A, 10V	4V @ 250µA	105 nC @ 10 V	±30V	3320 pF @ 25 V	-	294W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.