Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRFR5410TRPBF MOSFET P-CH 100V 13A DPAK Infineon Technologies	21,860 In Stock	1 : ¥11.58000 Cut Tape (CT) 2,000 : ¥4.78090 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	205mOhm @ 7.8A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVMFS6H800NT1G MOSFET N-CH 80V 28A/203A 5DFN onsemi	1,654 In Stock	1 : ¥40.64000 Cut Tape (CT) 1,500 : ¥21.01239 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	28A (Ta), 203A (Tc)	10V	2.1mOhm @ 50A, 10V	4V @ 330µA	85 nC @ 10 V	±20V	5530 pF @ 40 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFWS3D6N10MCLT1G PTNG 100V LL NCH SO-8FL WETTABLE onsemi	838 In Stock 7,500 Factory	1 : ¥28.82000 Cut Tape (CT) 1,500 : ¥14.88717 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	20A (Ta), 132A (Tc)	4.5V, 10V	3.6mOhm @ 48A, 10V	3V @ 270µA	60 nC @ 10 V	±20V	4411 pF @ 50 V	-	3.2W (Ta), 139W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.