Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-CoolSiC™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
100 V1700 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)6.5A (Ta), 21A (Tc)8.4A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V12V, 15V
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 10V38mOhm @ 5A, 10V1000mOhm @ 1A, 15V
Vgs(th) (Max) @ Id
3V @ 26µA3V @ 42µA5.7V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 12 V8.3 nC @ 10 V13 nC @ 10 V
Vgs (Max)
+20V, -10V±20V
Input Capacitance (Ciss) (Max) @ Vds
275 pF @ 1000 V500 pF @ 50 V850 pF @ 50 V
Power Dissipation (Max)
3.5W (Ta), 36W (Tc)3.6W (Ta), 49W (Tc)68W (Tc)
Supplier Device Package
5-DFN (5x6) (8-SOFL)PG-TO263-7-13
Package / Case
8-PowerTDFN, 5 LeadsTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
1,035
In Stock
1 : ¥39.32000
Cut Tape (CT)
1,000 : ¥20.34800
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
+20V, -10V
275 pF @ 1000 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
5-DFN, 8-SO Flat Lead
NVMFS040N10MCLT1G
PTNG 100V LL SO8FL
onsemi
5,044
In Stock
1 : ¥5.66000
Cut Tape (CT)
1,500 : ¥2.41992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
6.5A (Ta), 21A (Tc)
4.5V, 10V
38mOhm @ 5A, 10V
3V @ 26µA
8.3 nC @ 10 V
±20V
500 pF @ 50 V
-
3.5W (Ta), 36W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFS021N10MCLT1G
PTNG 100V LL SO8FL
onsemi
991
In Stock
1,500
Factory
1 : ¥7.06000
Cut Tape (CT)
1,500 : ¥3.01825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.4A (Ta), 31A (Tc)
4.5V, 10V
23mOhm @ 7A, 10V
3V @ 42µA
13 nC @ 10 V
±20V
850 pF @ 50 V
-
3.6W (Ta), 49W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.