Single FETs, MOSFETs

Results: 2
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
46A (Ta), 348A (Tc)123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.25mOhm @ 80A, 10V4.3mOhm @ 44A, 10V
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4090 pF @ 40 V14530 pF @ 40 V
Power Dissipation (Max)
5.1W (Ta), 287W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-DFNW (8.3x8.4)8-PQFN (5x6), Power56
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
NVMTSC1D3N08M7TXG
NVMTSC1D3N08M7TXG
MOSFET N-CH 80V 46A/348A 8DFNW
onsemi
2,718
In Stock
1 : ¥45.56000
Cut Tape (CT)
3,000 : ¥22.18251
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
46A (Ta), 348A (Tc)
10V
1.25mOhm @ 80A, 10V
4V @ 250µA
196 nC @ 10 V
±20V
14530 pF @ 40 V
-
5.1W (Ta), 287W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-DFNW (8.3x8.4)
8-PowerTDFN
8-PQFN
FDMS4D4N08C
MOSFET N-CH 80V 123A 8PQFN
onsemi
2,507
In Stock
1 : ¥21.10000
Cut Tape (CT)
3,000 : ¥8.84196
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
123A (Tc)
6V, 10V
4.3mOhm @ 44A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
4090 pF @ 40 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.