Single FETs, MOSFETs

Results: 4
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®TrenchFET® Gen IVU-MOSVIIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)6A (Ta)23.8A (Ta), 80.3A (Tc)200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V4.4mOhm @ 15A, 10V17.6mOhm @ 6A, 8V235mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V19.5 nC @ 4.5 V48 nC @ 10 V260 nC @ 10 V
Vgs (Max)
±8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
55 pF @ 10 V1400 pF @ 6 V1980 pF @ 30 V13500 pF @ 20 V
Power Dissipation (Max)
150mW (Ta)1W (Ta)5W (Ta), 57W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® 8 x 8PowerPAK® SO-8SOT-23FSSM
Package / Case
PowerPAK® 8 x 8PowerPAK® SO-8SC-75, SOT-416SOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
4,630,248
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.39492
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.5V, 4.5V
235mOhm @ 800mA, 4.5V
1V @ 1mA
1 nC @ 4.5 V
±8V
55 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
-
-
Surface Mount
SSM
SC-75, SOT-416
362,255
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥0.87864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
6A (Ta)
1.8V, 8V
17.6mOhm @ 6A, 8V
1V @ 1mA
19.5 nC @ 4.5 V
±10V
1400 pF @ 6 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
PowerPAK SO-8 Single
SIR186LDP-T1-RE3
N-CHANNEL 60-V (D-S) MOSFET POWE
Vishay Siliconix
3,817
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28236
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23.8A (Ta), 80.3A (Tc)
4.5V, 10V
4.4mOhm @ 15A, 10V
2.5V @ 250µA
48 nC @ 10 V
±20V
1980 pF @ 30 V
-
5W (Ta), 57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK 8 x 8
SQJQ402E-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥22.41000
Cut Tape (CT)
2,000 : ¥10.11731
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
200A (Tc)
4.5V, 10V
1.7mOhm @ 20A, 10V
2.5V @ 250µA
260 nC @ 10 V
±20V
13500 pF @ 20 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.