Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

EPC2052 GANFET N-CH 100V 8.2A DIE EPC	133,805 In Stock	1 : ¥12.48000 Cut Tape (CT) 2,500 : ¥5.62440 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	8.2A (Ta)	5V	13.5mOhm @ 11A, 5V	2.5V @ 3mA	4.5 nC @ 5 V	+6V, -4V	575 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2059 TRANS GAN 170V DIE .009OHM EPC	27,284 In Stock	1 : ¥27.26000 Cut Tape (CT) 2,500 : ¥13.26373 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	170 V	24A (Ta)	5V	9mOhm @ 10A, 5V	2.5V @ 3mA	7.4 nC @ 5 V	+6V, -4V	836 pF @ 85 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2619 TRANS GAN 100V .0042 OHM 6LGA EPC	6,146 In Stock	1 : ¥28.57000 Cut Tape (CT) 2,500 : ¥13.90550 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	3.3mOhm @ 16A, 5V	2.5V @ 5.5mA	8.3 nC @ 5 V	+6V, -4V	1180 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2012C GANFET N-CH 200V 5A DIE OUTLINE EPC	17,516 In Stock	1 : ¥30.70000 Cut Tape (CT) 2,500 : ¥10.05701 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	5A (Ta)	5V	100mOhm @ 3A, 5V	2.5V @ 1mA	1.3 nC @ 5 V	+6V, -4V	140 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2053 GANFET N-CH 100V 48A DIE EPC	24,190 In Stock	1 : ¥53.86000 Cut Tape (CT) 2,500 : ¥26.20655 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	100 V	48A (Ta)	5V	3.8mOhm @ 25A, 5V	2.5V @ 9mA	14.8 nC @ 5 V	+6V, -4V	1895 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2022 GANFET N-CH 100V 90A DIE EPC	5,415 In Stock	1 : ¥73.64000 Cut Tape (CT) 1,000 : ¥41.75392 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Ta)	5V	3.2mOhm @ 25A, 5V	2.5V @ 12mA	-	+6V, -4V	1500 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
GAN3R2-100CBEAZ 100 V, 3.2 MOHM GALLIUM NITRIDE Nexperia USA Inc.	811 In Stock	1 : ¥39.82000 Cut Tape (CT) 1,500 : ¥14.65992 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	60A	5V	3.2mOhm @ 25A, 5V	2.5V @ 9mA	12 nC @ 5 V	+6V, -4V	1000 pF @ 50 V	-	394W	-40°C ~ 150°C (TJ)	-	-	Surface Mount	8-WLCSP (3.5x2.13)	8-XFBGA, WLCSP
EPC2204 TRANS GAN 100V DIE 5.6MOHM EPC	0 In Stock Check Lead Time	1 : ¥19.79000 Cut Tape (CT) 2,500 : ¥8.93286 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	6mOhm @ 16A, 5V	2.5V @ 4mA	7.4 nC @ 5 V	+6V, -4V	851 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.