Single FETs, MOSFETs

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDNexperia USA Inc.onsemi
Series
-UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V100 V250 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)33A (Tc)42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
27.5mOhm @ 15A, 10V94mOhm @ 16.5A, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA4V @ 1mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V48 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V1634 pF @ 50 V2135 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)89W (Tc)235W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8SOT-23TO-263 (D2PAK)
Package / Case
SC-100, SOT-669TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
LFPAK56/POWER-SO8/SOT669
PSMN028-100YS,115
MOSFET N-CH 100V 42A LFPAK56
Nexperia USA Inc.
11,695
In Stock
1 : ¥7.14000
Cut Tape (CT)
1,500 : ¥3.14983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
42A (Tc)
10V
27.5mOhm @ 15A, 10V
4V @ 1mA
33 nC @ 10 V
±20V
1634 pF @ 50 V
-
89W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
202,907
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TO-263
FDB33N25TM
MOSFET N-CH 250V 33A D2PAK
onsemi
0
In Stock
Check Lead Time
1 : ¥25.04000
Cut Tape (CT)
800 : ¥10.18868
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.