Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STD130N6F7 MOSFET N-CHANNEL 60V 80A DPAK STMicroelectronics	3,368 In Stock	1 : ¥12.48000 Cut Tape (CT) 2,500 : ¥5.16329 Tape & Reel (TR)	STripFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	5mOhm @ 40A, 10V	4V @ 250µA	42 nC @ 10 V	±20V	2600 pF @ 30 V	-	134W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP4047SK3-13 MOSFET P-CH 40V 20A TO252 Diodes Incorporated	61,980 In Stock 107,500 Factory	1 : ¥4.76000 Cut Tape (CT) 2,500 : ¥1.80566 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	20A (Tc)	4.5V, 10V	45mOhm @ 4.4A, 10V	3V @ 250µA	23.2 nC @ 10 V	±20V	1328 pF @ 20 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCU50P06Y-TP P-CHANNEL MOSFET,DPAK Micro Commercial Co	2,144 In Stock	1 : ¥18.14000 Cut Tape (CT) 2,500 : ¥8.18816 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	12mOhm @ 25A, 10V	3V @ 250µA	79 nC @ 10 V	±18V	4260 pF @ 30 V	-	89W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.