Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

XPQR3004PB,LXHQ 40V U-MOS IX-H L-TOGL 0.3MOHM Toshiba Semiconductor and Storage	4,053 In Stock	1 : ¥58.70000 Cut Tape (CT) 1,500 : ¥25.03901 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	400A (Ta)	6V, 10V	0.3mOhm @ 200A, 10V	3V @ 1mA	295 nC @ 10 V	±20V	26910 pF @ 10 V	-	750W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	L-TOGL™	8-PowerBSFN
SCT3120ALGC11 SICFET N-CH 650V 21A TO247N Rohm Semiconductor	5,735 In Stock	1 : ¥72.24000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	18V	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	103W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
STP100N8F6 MOSFET N-CH 80V 100A TO220 STMicroelectronics	38,284 In Stock	1 : ¥8.95000 Tube	STripFET™ F6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Tc)	10V	9mOhm @ 50A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	5955 pF @ 25 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IMW65R107M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	614 In Stock	1 : ¥56.32000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	142mOhm @ 8.9A, 18V	5.7V @ 3mA	15 nC @ 18 V	+23V, -5V	496 pF @ 400 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
NTHL160N120SC1 SICFET N-CH 1200V 17A TO247-3 onsemi	309 In Stock	1 : ¥68.22000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	20V	224mOhm @ 12A, 20V	4.3V @ 2.5mA	34 nC @ 20 V	+25V, -15V	665 pF @ 800 V	-	119W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SIHG068N60EF-GE3 MOSFET N-CH 600V 41A TO247AC Vishay Siliconix	374 In Stock	1 : ¥47.86000 Tube	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	68mOhm @ 16A, 10V	5V @ 250µA	77 nC @ 10 V	±30V	2628 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SIHG22N60EF-GE3 MOSFET N-CH 600V 19A TO247AC Vishay Siliconix	793 In Stock	1 : ¥33.58000 Tube	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	19A (Tc)	10V	182mOhm @ 11A, 10V	4V @ 250µA	96 nC @ 10 V	±30V	1423 pF @ 100 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
NTHL185N60S5H SUPERFET5 FAST 185MOHM TO-247-3 onsemi	0 In Stock Check Lead Time	450 : ¥25.47173 Tube	SuperFET® III	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	185mOhm @ 7.5A, 10V	4.3V @ 1.4mA	25 nC @ 10 V	±30V	1350 pF @ 400 V	-	116W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
FCH25N60N POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	6,788 Marketplace	Unavailable Unavailable in your selected currency	SupreMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	126mOhm @ 12.5A, 10V	4V @ 250µA	74 nC @ 10 V	±30V	3352 pF @ 100 V	-	216W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
SCTW35N65G2VAG SICFET N-CH 650V 45A HIP247 STMicroelectronics	0 In Stock Check Lead Time	30 : ¥109.24133 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+22V, -10V	1370 pF @ 400 V	-	240W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.