Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiSTMicroelectronics
Series
PowerTrench®SIPMOS®STripFET™ IITrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V240 V
Current - Continuous Drain (Id) @ 25°C
110mA (Ta)2.4A (Tc)3.7A (Ta)4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
120mOhm @ 3.7A, 10V173mOhm @ 5A, 10V260mOhm @ 1.2A, 10V14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 56µA2V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 10 V14 nC @ 10 V20 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
77 pF @ 25 V280 pF @ 25 V619 pF @ 25 V632 pF @ 50 V
Power Dissipation (Max)
360mW (Ta)3W (Ta)3.3W (Tc)8W (Tc)
Supplier Device Package
PG-SOT23SOT-223SOT-223-4
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
STN2NF10
MOSFET N-CH 100V 2.4A SOT-223
STMicroelectronics
6,666
In Stock
1 : ¥8.37000
Cut Tape (CT)
4,000 : ¥3.46684
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2.4A (Tc)
10V
260mOhm @ 1.2A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
280 pF @ 25 V
-
3.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT-23-3
BSS131H6327XTSA1
MOSFET N-CH 240V 110MA SOT23-3
Infineon Technologies
4,510
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68275
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
240 V
110mA (Ta)
4.5V, 10V
14Ohm @ 100mA, 10V
1.8V @ 56µA
3.1 nC @ 10 V
±20V
77 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT223
BUK98180-100A/CUX
MOSFET N-CH 100V 4.6A SOT223
Nexperia USA Inc.
93,125
In Stock
1 : ¥4.84000
Cut Tape (CT)
1,000 : ¥1.41110
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.6A (Tc)
4.5V, 10V
173mOhm @ 5A, 10V
2V @ 1mA
-
±10V
619 pF @ 25 V
-
8W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT-223-4
FDT3612
MOSFET N-CH 100V 3.7A SOT223-4
onsemi
34,679
In Stock
1 : ¥5.66000
Cut Tape (CT)
4,000 : ¥2.16468
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.7A (Ta)
6V, 10V
120mOhm @ 3.7A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
632 pF @ 50 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.