Single FETs, MOSFETs

Results: 6
Manufacturer
Nexperia USA Inc.onsemiSTMicroelectronicsVishay Siliconix
Series
-EMDmesh™ VSuperFET® IIITrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
20 V60 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)2.6A (Ta)35A (Tc)44A (Tc)80A (Tc)84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V, 10V10V
Rds On (Max) @ Id, Vgs
29mOhm @ 42A, 10V30mOhm @ 40A, 10V57mOhm @ 3.6A, 4.5V70mOhm @ 22A, 10V78mOhm @ 19.5A, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
850mV @ 250µA2.1V @ 250µA4V @ 250µA4.5V @ 4.4mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V5.5 nC @ 4.5 V78 nC @ 10 V91 nC @ 10 V204 nC @ 10 V443 nC @ 10 V
Vgs (Max)
±8V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V3090 pF @ 400 V3375 pF @ 100 V6900 pF @ 100 V8825 pF @ 100 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)710mW (Ta)210W (Tc)312W (Tc)450W (Tc)520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3 (TO-236)TO-236ABTO-247-3TO-247ACTO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
NX7002AK,215
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
501,385
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26369
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
17 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
153,679
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87979
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
D2Pak
STB45N65M5
MOSFET N CH 650V 35A D2PAK
STMicroelectronics
4,218
In Stock
1 : ¥61.00000
Cut Tape (CT)
1,000 : ¥34.57944
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
78mOhm @ 19.5A, 10V
5V @ 250µA
91 nC @ 10 V
±25V
3375 pF @ 100 V
-
210W (Tc)
150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
FCB070N65S3
MOSFET N-CH 650V 44A D2PAK
onsemi
1,491
In Stock
1 : ¥50.00000
Cut Tape (CT)
800 : ¥31.51139
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
44A (Tc)
10V
70mOhm @ 22A, 10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
-
312W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 HiP
STW88N65M5
MOSFET N-CH 650V 84A TO247-3
STMicroelectronics
982
In Stock
1 : ¥121.91000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
84A (Tc)
10V
29mOhm @ 42A, 10V
5V @ 250µA
204 nC @ 10 V
±25V
8825 pF @ 100 V
-
450W (Tc)
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
SIHG80N60E-GE3
MOSFET N-CH 600V 80A TO247AC
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥94.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
80A (Tc)
10V
30mOhm @ 40A, 10V
4V @ 250µA
443 nC @ 10 V
±30V
6900 pF @ 100 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.