Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFP260NPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	9,174 In Stock	1 : ¥33.17000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
BS250FTA MOSFET P-CH 45V 90MA SOT23-3 Diodes Incorporated	5,086 In Stock 18,000 Factory	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.04651 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	45 V	90mA (Ta)	10V	14Ohm @ 200mA, 10V	3.5V @ 1mA	-	±20V	25 pF @ 10 V	-	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.