Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7000 MOSFET TO92 N 60V 0.2A 5OHM 150C onsemi	44,298 In Stock 40,000 Factory	1 : ¥4.02000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRLU3410PBF MOSFET N-CH 100V 17A IPAK Infineon Technologies	4,653 In Stock	1 : ¥8.70000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	4V, 10V	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	800 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.