Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiToshiba Semiconductor and Storage
Series
-QFET®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V120 V200 V
Current - Continuous Drain (Id) @ 25°C
270mA (Ta)3.7A (Tc)56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 28A, 10V1.4Ohm @ 1.85A, 10V1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA4V @ 1mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V13 nC @ 10 V69 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
33 pF @ 5 V430 pF @ 25 V4200 pF @ 60 V
Power Dissipation (Max)
330mW (Ta)2.5W (Ta), 45W (Tc)45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SC-70-3 (SOT323)TO-220SISTO-252AA
Package / Case
SC-70, SOT-323TO-220-3 Full PackTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-70-3
NTS4001NT1G
MOSFET N-CH 30V 270MA SC70-3
onsemi
48,536
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.69154
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
270mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
1.3 nC @ 5 V
±20V
33 pF @ 5 V
-
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
TO-252AA
FQD5P20TM
MOSFET P-CH 200V 3.7A DPAK
onsemi
2,365
In Stock
2,500
Factory
1 : ¥7.64000
Cut Tape (CT)
2,500 : ¥2.88900
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
122
In Stock
1 : ¥22.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
120 V
56A (Tc)
10V
7.5mOhm @ 28A, 10V
4V @ 1mA
69 nC @ 10 V
±20V
4200 pF @ 60 V
-
45W (Tc)
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.