Single FETs, MOSFETs

Results: 6
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDInfineon TechnologiesonsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V100 V200 V400 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)210mA (Ta)220mA (Ta)3.1A (Tc)6A (Ta)88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.65V, 4.5V1.8V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
11mOhm @ 88A, 10V42mOhm @ 5A, 10V1.8Ohm @ 1.9A, 10V3Ohm @ 500mA, 10V3.4Ohm @ 10mA, 4.5V6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA1.3V @ 250µA1.6V @ 250µA2.6V @ 1mA4V @ 250µA4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 4.5 V20 nC @ 10 V87 nC @ 10 V
Vgs (Max)
±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
11 pF @ 10 V20 pF @ 25 V27 pF @ 25 V350 pF @ 25 V560 pF @ 15 V7100 pF @ 100 V
Power Dissipation (Max)
225mW (Ta)310mW (Ta)350mW (Ta)1W (Ta)2.5W (Ta), 42W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAKPG-TO220-3SOT-23SOT-23-3 (TO-236)SOT-23FSOT-723
Package / Case
SOT-23-3 Flat LeadsSOT-723TO-220-3TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-723_631AA
NTK3043NT1G
MOSFET N-CH 20V 210MA SOT723
onsemi
83,186
In Stock
1 : ¥2.79000
Cut Tape (CT)
4,000 : ¥0.50380
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
210mA (Ta)
1.65V, 4.5V
3.4Ohm @ 10mA, 4.5V
1.3V @ 250µA
-
±10V
11 pF @ 10 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
SOT 23-3
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
266,013
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.49109
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.6V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
94,973
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63492
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
42mOhm @ 5A, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
±12V
560 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TO-220-3
IPP110N20N3GXKSA1
MOSFET N-CH 200V 88A TO220-3
Infineon Technologies
6,165
In Stock
1 : ¥59.68000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
11mOhm @ 88A, 10V
4V @ 270µA
87 nC @ 10 V
±20V
7100 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
D-PAK (TO-252AA)
IRFR320PBF
MOSFET N-CH 400V 3.1A DPAK
Vishay Siliconix
2,751
In Stock
1 : ¥9.85000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
3.1A (Tc)
10V
1.8Ohm @ 1.9A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
350 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
198,817
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22872
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.