Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMTH15H017LPSWQ-13 MOSFET BVDSS: 101V~250V POWERDI5 Diodes Incorporated	3,425 In Stock	1 : ¥14.20000 Cut Tape (CT) 2,500 : ¥6.42040 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	8A (Ta), 50A (Tc)	4.5V, 10V	17.5mOhm @ 20A, 10V	2.6V @ 250µA	50 nC @ 10 V	±20V	3369 pF @ 75 V	-	1.5W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
SQS460EN-T1_BE3 MOSFET N-CH 60V 8A PPAK1212-8 Vishay Siliconix	59,189 In Stock	1 : ¥7.14000 Cut Tape (CT) 3,000 : ¥3.81039 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	4.5V, 10V	36mOhm @ 5.3A, 10V	2.5V @ 250µA	20 nC @ 10 V	±20V	755 pF @ 25 V	-	39W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
IXTY1R4N120P MOSFET N-CH 1200V 1.4A TO252 Littelfuse Inc.	326 In Stock 490 Factory	1 : ¥32.76000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	1.4A (Tc)	10V	-	4.5V @ 100µA	-	±20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.