Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS214NH6327XTSA1 MOSFET N-CH 20V 1.5A SOT23-3 Infineon Technologies	292,034 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥0.69154 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.5A (Ta)	2.5V, 4.5V	140mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8 nC @ 5 V	±12V	143 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
AOSP66923 MOSFET N-CH 100V 12A 8SOIC Alpha & Omega Semiconductor Inc.	9,731 In Stock	1 : ¥7.64000 Cut Tape (CT) 3,000 : ¥3.14652 Tape & Reel (TR)	AlphaSGT™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Ta)	4.5V, 10V	11mOhm @ 12A, 10V	2.6V @ 250µA	35 nC @ 10 V	±20V	1725 pF @ 50 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRL510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	8,528 In Stock	1 : ¥10.67000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	4V, 5V	540mOhm @ 3.4A, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.