Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
75mA (Ta)9.4A (Ta), 27A (Tc)11A (Ta), 42A (Tc)18.4A (Ta), 108A (Tc)35A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V-
Rds On (Max) @ Id, Vgs
5.1mOhm @ 34A, 10V13.1mOhm @ 10A, 10V17.3mOhm @ 7.5A, 10V20Ohm @ 150mA, 10V-
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 45µA3V @ 192µA3.5V @ 1mA3.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 10 V17 nC @ 10 V55 nC @ 10 V91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V325 pF @ 25 V906 pF @ 40 V4100 pF @ 50 V6660 pF @ 25 V
Power Dissipation (Max)
330mW (Ta)2.9W (Ta), 23W (Tc)3.6W (Ta), 54W (Tc)3.8W (Ta), 131W (Tc)4.1W (Ta), 166W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)8-DFN (5x6.15)8-WDFN (3.3x3.3)SOT-23-3
Package / Case
8-PowerTDFN, 5 Leads8-PowerVDFN8-PowerWDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
5Results

Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZVP3310FTA
MOSFET P-CH 100V 75MA SOT23-3
Diodes Incorporated
14,762
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30897
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
75mA (Ta)
10V
20Ohm @ 150mA, 10V
3.5V @ 1mA
-
±20V
50 pF @ 25 V
-
330mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-DFN
NVMFSC1D6N06CL
MOSFET N-CH 60V 35A/224A 8DFN
onsemi
2,928
In Stock
1 : ¥51.89000
Cut Tape (CT)
3,000 : ¥27.58886
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
35A (Ta), 224A (Tc)
-
-
2V @ 250µA
91 nC @ 10 V
±20V
6660 pF @ 25 V
-
4.1W (Ta), 166W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-DFN (5x6.15)
8-PowerVDFN
8-WDFN
NTTFS015N04CTAG
MOSFET N-CH 40V 9.4A/27A 8WDFN
onsemi
0
In Stock
Check Lead Time
1 : ¥4.52000
Cut Tape (CT)
1,500 : ¥1.68558
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
9.4A (Ta), 27A (Tc)
10V
17.3mOhm @ 7.5A, 10V
3.5V @ 20µA
6.3 nC @ 10 V
±20V
325 pF @ 25 V
-
2.9W (Ta), 23W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
5-DFN, 8-SO Flat Lead
NVMFS6H852NLT1G
MOSFET N-CH 80V 11A/42A 5DFN
onsemi
2,149
In Stock
1 : ¥7.55000
Cut Tape (CT)
1,500 : ¥3.23187
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
11A (Ta), 42A (Tc)
4.5V, 10V
13.1mOhm @ 10A, 10V
2V @ 45µA
17 nC @ 10 V
±20V
906 pF @ 40 V
-
3.6W (Ta), 54W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFS005N10MCLT1G
PTNG 100V LL SO8FL
onsemi
1,917
In Stock
67,500
Factory
1 : ¥15.19000
Cut Tape (CT)
1,500 : ¥7.22058
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
18.4A (Ta), 108A (Tc)
4.5V, 10V
5.1mOhm @ 34A, 10V
3V @ 192µA
55 nC @ 10 V
±20V
4100 pF @ 50 V
-
3.8W (Ta), 131W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.