Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 15A, 10V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.3 nC @ 4.5 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V1970 pF @ 50 V
Power Dissipation (Max)
370mW (Ta)3W (Ta), 6W (Tc)
Supplier Device Package
8-SOICSOT-23-3
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-7
MOSFET N-CH 60V 380MA SOT23-3
Diodes Incorporated
192,206
In Stock
58,332,000
Factory
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
380mA (Ta)
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.3 nC @ 4.5 V
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4190ADY-T1-GE3
MOSFET N-CH 100V 18.4A 8SO
Vishay Siliconix
1,117
In Stock
1 : ¥14.70000
Cut Tape (CT)
2,500 : ¥6.61034
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
18.4A (Tc)
4.5V, 10V
8.8mOhm @ 15A, 10V
2.8V @ 250µA
67 nC @ 10 V
±20V
1970 pF @ 50 V
-
3W (Ta), 6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.