Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

DXTN07100BFG-7 TRANS NPN 100V 2A POWERDI3 Diodes Incorporated	2,668 In Stock 10,000 Factory	1 : ¥4.52000 Cut Tape (CT) 2,000 : ¥1.26529 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	2 A	100 V	400mV @ 200mA, 2A	50nA (ICBO)	100 @ 500mA, 2V	900 mW	175MHz	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PowerDI3333-8 (SWP) Type UX
2SCR567F3TR TRANS NPN 120V 2.5A HUML2020L3 Rohm Semiconductor	872 In Stock	1 : ¥9.69000 Cut Tape (CT) 3,000 : ¥4.01790 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	2.5 A	120 V	200mV @ 80mA, 800mA	1µA (ICBO)	120 @ 100mA, 5V	1 W	220MHz	150°C (TJ)	Surface Mount	3-UDFN Exposed Pad	HUML2020L3

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.