Single Bipolar Transistors

Results: 3
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA1 A3 A
Voltage - Collector Emitter Breakdown (Max)
60 V100 V300 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA1V @ 300mA, 3A-
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA, 10V100 @ 150mA, 200mV100 @ 500mA, 5V
Power - Max
1 W1.5 W30 W
Frequency - Transition
3MHz50MHz-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-220-3TO-243AA
Supplier Device Package
SOT-89-3TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AP7387Q-30Y-13
ZXTP4003ZTA
TRANS PNP 100V 1A SOT89-3
Diodes Incorporated
142,953
In Stock
67,000
Factory
1 : ¥3.04000
Cut Tape (CT)
1,000 : ¥0.88099
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
1 A
100 V
-
50nA (ICBO)
100 @ 150mA, 200mV
1.5 W
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
TO-220-3
KSD880YTU
TRANS NPN 60V 3A TO220-3
onsemi
577
In Stock
1 : ¥7.06000
Tube
-
Tube
Active
NPN
3 A
60 V
1V @ 300mA, 3A
100µA (ICBO)
100 @ 500mA, 5V
30 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
AP7387Q-30Y-13
DXTA42-13
TRANS NPN 300V 0.5A SOT89-3
Diodes Incorporated
912
In Stock
810,000
Factory
1 : ¥3.28000
Cut Tape (CT)
2,500 : ¥1.10074
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
300 V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1 W
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
Showing
of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.