Single Bipolar Transistors

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Transistor Type
NPNPNP
Voltage - Collector Emitter Breakdown (Max)
12 V60 V
Vce Saturation (Max) @ Ib, Ic
90mV @ 200mA, 2A140mV @ 200mA, 2A220mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1A, 2V150 @ 500mA, 2V200 @ 500mA, 2V
Frequency - Transition
100MHz150MHz
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
NSS60201LT1G
TRANS NPN 60V 2A SOT23-3
onsemi
17,698
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.12379
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
2 A
60 V
140mV @ 200mA, 2A
100nA (ICBO)
150 @ 1A, 2V
460 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT 23-3
NSS12201LT1G
TRANS NPN 12V 2A SOT23-3
onsemi
28,441
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.02259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
NPN
2 A
12 V
90mV @ 200mA, 2A
100nA (ICBO)
200 @ 500mA, 2V
460 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT 23-3
NSS60200LT1G
TRANS PNP 60V 2A SOT23-3
onsemi
0
In Stock
Check Lead Time
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.93433
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
2 A
60 V
220mV @ 200mA, 2A
100nA (ICBO)
150 @ 500mA, 2V
460 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
Showing
of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.