Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2SC2713-GR,LF TRANS NPN 120V 0.1A TO236 Toshiba Semiconductor and Storage	23,154 In Stock	1 : ¥1.97000 Cut Tape (CT) 3,000 : ¥0.39640 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	100 mA	120 V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	150 mW	100MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236
2SA1162-O,LF TRANS PNP 50V 0.15A SMINI Toshiba Semiconductor and Storage	5,385 In Stock	1 : ¥1.23000 Cut Tape (CT) 3,000 : ¥0.24805 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	PNP	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	150 mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.