Single Bipolar Transistors

Results: 4
Manufacturer
onsemiToshiba Semiconductor and Storage
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
50 mA1.5 A
Voltage - Collector Emitter Breakdown (Max)
120 V160 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V300 @ 1mA, 6V
Power - Max
500 mW10 W
Frequency - Transition
100MHz110MHz
Package / Case
TO-225AA, TO-126-3TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-126NTO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
KSC1845FTA
TRANS NPN 120V 0.05A TO92-3
onsemi
27,280
In Stock
1 : ¥2.79000
Cut Tape (CT)
2,000 : ¥0.50380
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
50 mA
120 V
300mV @ 1mA, 10mA
50nA (ICBO)
300 @ 1mA, 6V
500 mW
110MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
KSA992FTA
TRANS PNP 120V 0.05A TO92-3
onsemi
23,704
In Stock
1 : ¥3.04000
Cut Tape (CT)
2,000 : ¥0.55355
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
50 mA
120 V
300mV @ 1mA, 10mA
1µA
300 @ 1mA, 6V
500 mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
5,307
In Stock
1 : ¥3.53000
Bulk
-
Bulk
Active
PNP
1.5 A
160 V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
10 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
7,633
In Stock
1 : ¥4.10000
Bulk
-
Bulk
Active
NPN
1.5 A
160 V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
10 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
Showing
of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.