Single Bipolar Transistors

Results: 2
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
1 A4 A
Voltage - Collector Emitter Breakdown (Max)
250 V350 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A1V @ 200mA, 1A
Current - Collector Cutoff (Max)
10µA (ICBO)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A, 5V30 @ 300mA, 10V
Frequency - Transition
10MHz30MHz
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
TIP47G
TRANS NPN 250V 1A TO220
onsemi
1,910
In Stock
1 : ¥7.80000
Tube
-
Tube
Active
NPN
1 A
250 V
1V @ 200mA, 1A
1mA
30 @ 300mA, 10V
2 W
10MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
MJE15035G
TRANS PNP 350V 4A TO220
onsemi
1,456
In Stock
1 : ¥12.56000
Tube
-
Tube
Active
PNP
4 A
350 V
500mV @ 100mA, 1A
10µA (ICBO)
10 @ 2A, 5V
2 W
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.