Single Bipolar Transistors

Results: 4
Manufacturer
onsemiSTMicroelectronics
Transistor Type
NPNNPN - DarlingtonPNP - Darlington
Current - Collector (Ic) (Max)
5 A10 A
Voltage - Collector Emitter Breakdown (Max)
100 V500 V
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A3V @ 40mA, 10A
Current - Collector Cutoff (Max)
10µA (ICBO)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 600mA, 5V1000 @ 5A, 4V
Power - Max
40 W80 W90 W125 W
Frequency - Transition
15MHz-
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-220-3TO-220-3 Full PackTO-247-3
Supplier Device Package
TO-220TO-220F-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220F
FJPF5021OTU
TRANS NPN 500V 5A TO220F-3
onsemi
1,439
In Stock
1 : ¥11.90000
Tube
-
Tube
Active
NPN
5 A
500 V
1V @ 600mA, 3A
10µA (ICBO)
20 @ 600mA, 5V
40 W
15MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3
TO-220-3, TO-220AB
TIP147T
TRANS PNP DARL 100V 10A TO220
STMicroelectronics
574
In Stock
1 : ¥15.35000
Tube
-
Tube
Active
PNP - Darlington
10 A
100 V
3V @ 40mA, 10A
2mA
1000 @ 5A, 4V
90 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-247-3 Long Lead EP
TIP147G
TRANS PNP DARL 100V 10A TO247-3
onsemi
547
In Stock
180
Factory
1 : ¥22.91000
Tube
-
Tube
Active
PNP - Darlington
10 A
100 V
3V @ 40mA, 10A
2mA
1000 @ 5A, 4V
125 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-220-3, TO-220AB
TIP142T
TRANS NPN DARL 100V 10A TO220
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥14.86000
Tube
-
Tube
Active
NPN - Darlington
10 A
100 V
3V @ 40mA, 10A
2mA
1000 @ 5A, 4V
80 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
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of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.