RF FETs, MOSFETs

Results: 4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Frequency
1.8MHz ~ 250MHz27MHz ~ 250MHz520MHz870MHz
Gain
17.2dB20.9dB21.1dB28dB
Voltage - Test
7.5 V12.5 V50 V
Current Rating (Amps)
10µA-
Power - Output
4.9W16W115W300W
Voltage - Rated
30 V40 V133 V
Mounting Type
Surface MountThrough Hole
Package / Case
PLD-1.5WTO-220-3TO-243AATO-247-3
Supplier Device Package
PLD-1.5WSOT-89ATO-220-3TO-247
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Mounting Type
Package / Case
Supplier Device Package
TO-243AA
AFT05MS004NT1
RF MOSFET LDMOS 7.5V SOT89A
NXP USA Inc.
29,164
In Stock
1 : ¥23.15000
Cut Tape (CT)
1,000 : ¥11.36754
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
LDMOS
520MHz
20.9dB
7.5 V
-
-
100 mA
4.9W
30 V
Surface Mount
TO-243AA
SOT-89A
PLD-1.5W
AFT09MS015NT1
RF MOSFET LDMOS 12.5V PLD-1.5W
NXP USA Inc.
2,146
In Stock
1 : ¥51.15000
Cut Tape (CT)
1,000 : ¥29.03080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
LDMOS
870MHz
17.2dB
12.5 V
-
-
100 mA
16W
40 V
Surface Mount
PLD-1.5W
PLD-1.5W
MRF101xN
MRF101AN
RF MOSFET LDMOS 50V TO220-3
NXP USA Inc.
500
In Stock
1 : ¥243.00000
Tube
-
Tube
Active
LDMOS
1.8MHz ~ 250MHz
21.1dB
50 V
10µA
-
100 mA
115W
133 V
-
TO-220-3
TO-220-3
MRF300AN
MRF300AN
RF MOSFET LDMOS 50V TO247
NXP USA Inc.
92
In Stock
1 : ¥435.76000
Tube
-
Tube
Active
LDMOS
27MHz ~ 250MHz
28dB
50 V
-
-
-
300W
-
Through Hole
TO-247-3
TO-247
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of 4

RF FETs, MOSFETs


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.