Gate Drivers

Results: 3
Packaging
BulkTube
Product Status
ActiveLast Time Buy
Gate Type
IGBT, N-Channel MOSFETN-Channel, P-Channel MOSFET
Voltage - Supply
4V ~ 15V4.5V ~ 18V
Logic Voltage - VIL, VIH
1V, 2.3V1V, 2V
Current - Peak Output (Source, Sink)
4A, 4A5A, 5A
Input Type
InvertingNon-Inverting
Rise / Fall Time (Typ)
7ns, 6ns20ns, 15ns
Operating Temperature
-40°C ~ 125°C (TA)-40°C ~ 140°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
8-DIP (0.300", 7.62mm)8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-PDIP8-SOIC
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
8-DIP
UCC27424P
IC GATE DRVR LOW-SIDE 8DIP
Texas Instruments
4,055
In Stock
1 : ¥9.36000
Tube
-
Tube
Active
Not Verified
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4V ~ 15V
1V, 2V
4A, 4A
Non-Inverting
20ns, 15ns
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
8-SOIC
UCC27423D
IC GATE DRVR LOW-SIDE 8SOIC
Texas Instruments
5,039
In Stock
1 : ¥11.65000
Tube
-
Tube
Last Time Buy
Not Verified
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4V ~ 15V
1V, 2V
4A, 4A
Inverting
20ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
8-DIP
UCC27524P
IC GATE DRVR LOW-SIDE 8DIP
Texas Instruments
966
In Stock
452,083
Marketplace
1 : ¥20.57000
Tube
-
Bulk
Tube
Active
Not Verified
Low-Side
Independent
2
IGBT, N-Channel MOSFET
4.5V ~ 18V
1V, 2.3V
5A, 5A
Non-Inverting
7ns, 6ns
-40°C ~ 140°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
Showing
of 3

Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.