Gate Drivers

Results: 2
Manufacturer
Infineon TechnologiesTexas Instruments
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeLow-Side
Gate Type
IGBT, N-Channel MOSFETN-Channel, P-Channel MOSFET
Voltage - Supply
2.35V ~ 7V10V ~ 32V
Logic Voltage - VIL, VIH
1.2V, 2.2V2.31V, 4.69V
Current - Peak Output (Source, Sink)
2.5A, 2.5A2.5A, 5A
Rise / Fall Time (Typ)
15ns, 7ns60ns, 60ns
Mounting Type
Surface MountSurface Mount, Wettable Flank
Package / Case
10-TFDFN Exposed PadSOT-23-6
Supplier Device Package
PG-TSON-10-2SOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
Rise / Fall Time (Typ)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-6 PKG
UCC27531QDBVRQ1
IC GATE DRVR LOW-SIDE SOT23-6
Texas Instruments
6,971
In Stock
1 : ¥13.26000
Cut Tape (CT)
3,000 : ¥5.62546
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Low-Side
Single
1
IGBT, N-Channel MOSFET
10V ~ 32V
1.2V, 2.2V
2.5A, 5A
Non-Inverting
15ns, 7ns
-40°C ~ 150°C (TJ)
Automotive
AEC-Q100
Surface Mount
SOT-23-6
SOT-23-6
TLF11251LDXUMA1
TLF11251LDXUMA1
IC GATE DRVR HALF-BRIDGE 10TDFN
Infineon Technologies
11,853
In Stock
1 : ¥23.38000
Cut Tape (CT)
5,000 : ¥9.82059
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Single
1
N-Channel, P-Channel MOSFET
2.35V ~ 7V
2.31V, 4.69V
2.5A, 2.5A
Non-Inverting
60ns, 60ns
-40°C ~ 150°C (TJ)
Automotive
AEC-Q100
Surface Mount, Wettable Flank
10-TFDFN Exposed Pad
PG-TSON-10-2
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of 2

Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.