JFETs

Results: 3
Manufacturer
Linear Integrated Systems, Inc.onsemiToshiba Semiconductor and Storage
Series
-LSK170B
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0)
30 µA @ 10 V6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id
200 mV @ 1 nA200 mV @ 100 nA600 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds
3pF @ 10V13pF @ 10V20pF @ 15V
Power - Max
200 mW225 mW400 mW
Operating Temperature
-55°C ~ 135°C (TJ)-55°C ~ 150°C (TJ)125°C (TJ)
Package / Case
5-TSSOP, SC-70-5, SOT-353TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3USV
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBF4117
JFET N-CH 40V SOT23-3
onsemi
2,004
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.15624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
40 V
-
30 µA @ 10 V
-
600 mV @ 1 nA
3pF @ 10V
225 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
44,060
In Stock
1 : ¥9.11000
Cut Tape (CT)
3,000 : ¥2.27713
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
-
-
6 mA @ 10 V
-
200 mV @ 100 nA
13pF @ 10V
200 mW
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
11,219
In Stock
1 : ¥49.34000
Cut Tape (CT)
3,000 : ¥27.57058
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
40 V
40 V
6 mA @ 10 V
10 mA
200 mV @ 1 nA
20pF @ 15V
400 mW
-55°C ~ 135°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
Showing
of 3

JFETs


Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.