JFETs

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Voltage - Breakdown (V(BR)GSS)
25 V35 V40 V
Current - Drain (Idss) @ Vds (Vgs=0)
30 µA @ 10 V5 mA @ 15 V20 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id
600 mV @ 1 nA1 V @ 1 µA1.8 V @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds
3pF @ 10V6pF @ 5V-
Power - Max
225 mW350 mW400 mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
3-CPHSOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBFJ112
JFET N-CH 35V SOT23-3
onsemi
67,821
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.79999
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
35 V
-
5 mA @ 15 V
-
1 V @ 1 µA
-
50 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SOT-23-3
CPH3910-TL-E
JFET N-CH 25V 50MA 3CPH
onsemi
46,806
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.21079
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
25 V
25 V
20 mA @ 5 V
50 mA
1.8 V @ 100 µA
6pF @ 5V
-
400 mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CPH
SOT-23-3
MMBF4117
JFET N-CH 40V SOT23-3
onsemi
0
In Stock
Check Lead Time
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.15620
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
40 V
-
30 µA @ 10 V
-
600 mV @ 1 nA
3pF @ 10V
-
225 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
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of 3

JFETs


Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.