JFETs

Results: 4
Manufacturer
Linear Integrated Systems, Inc.Microchip Technologyonsemi
Series
-LSK170D
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Voltage - Breakdown (V(BR)GSS)
35 V40 V
Current - Drain (Idss) @ Vds (Vgs=0)
2 mA @ 15 V5 mA @ 20 V18 mA @ 10 V20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id
200 mV @ 1 nA500 mV @ 1 nA500 mV @ 1 µA3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds
14pF @ 20V20pF @ 15V-
Resistance - RDS(On)
30 Ohms100 Ohms
Power - Max
400 mW625 mW1.8 W
Operating Temperature
-55°C ~ 125°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
-TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-18TO-92TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
J113-D74Z
JFET N-CH 35V TO92-3
onsemi
79,727
In Stock
6,000
Factory
1 : ¥2.22000
Cut Tape (CT)
2,000 : ¥0.66395
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
N-Channel
35 V
2 mA @ 15 V
500 mV @ 1 µA
-
100 Ohms
625 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
J111-D74Z
JFET N-CH 35V TO92-3
onsemi
67,005
In Stock
1 : ¥3.61000
Cut Tape (CT)
2,000 : ¥0.80445
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
N-Channel
35 V
20 mA @ 15 V
3 V @ 1 µA
-
30 Ohms
625 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
430
In Stock
1 : ¥44.82000
Bulk
Bulk
Active
N-Channel
40 V
18 mA @ 10 V
200 mV @ 1 nA
20pF @ 15V
-
400 mW
-55°C ~ 135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
JFET N-CH 40V TO18
2N4393
JFET N-CH 40V TO18
Microchip Technology
0
In Stock
Check Lead Time
100 : ¥146.78690
Bulk
-
Bulk
Active
N-Channel
40 V
5 mA @ 20 V
500 mV @ 1 nA
14pF @ 20V
100 Ohms
1.8 W
-55°C ~ 125°C (TJ)
Through Hole
-
TO-18
Showing
of 4

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.