Gate Drivers

Results: 2
Manufacturer
Power IntegrationsTexas Instruments
Series
-SCALE™-2+
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tray
Driven Configuration
Half-BridgeHigh-Side or Low-Side
Channel Type
IndependentSynchronous
Gate Type
IGBT, N-Channel, P-Channel MOSFETN-Channel MOSFET
Voltage - Supply
8V ~ 14V14.5V ~ 15.5V
Logic Voltage - VIL, VIH
0.8V, 2.2V-
Current - Peak Output (Source, Sink)
1.2A, 1.8A35A, 35A
Input Type
-Non-Inverting
High Side Voltage - Max (Bootstrap)
118 V1700 V
Rise / Fall Time (Typ)
15ns, 10ns20ns, 20ns
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 85°C (TA)
Package / Case
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)Module
Supplier Device Package
10-VSSOPModule
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC0435T2
2SC0435T2G1-17
IC GATE DRVR HI/LOW SIDE MODULE
Power Integrations
117
In Stock
1 : ¥818.60000
Tray
Tray
Active
Not Verified
High-Side or Low-Side
Independent
2
IGBT, N-Channel, P-Channel MOSFET
14.5V ~ 15.5V
-
35A, 35A
-
1700 V
20ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
Module
Module
10-VSSOP
LM5106MM/NOPB
IC GATE DRVR HALF-BRIDGE 10VSSOP
Texas Instruments
5,555
In Stock
1 : ¥16.15000
Cut Tape (CT)
1,000 : ¥9.64888
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Synchronous
2
N-Channel MOSFET
8V ~ 14V
0.8V, 2.2V
1.2A, 1.8A
Non-Inverting
118 V
15ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
10-VSSOP
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Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.