Gate Drivers

Results: 2
Series
-MOTIX™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Channel Type
SingleSynchronous
Number of Drivers
12
Gate Type
IGBT, N-Channel MOSFETN-Channel, P-Channel MOSFET
Voltage - Supply
2.35V ~ 7V6V ~ 28V
Logic Voltage - VIL, VIH
2.31V, 4.69V-
Current - Peak Output (Source, Sink)
100mA, 100mA2.5A, 2.5A
Rise / Fall Time (Typ)
60ns, 60ns-
Operating Temperature
-40°C ~ 150°C (TJ)-
Mounting Type
Surface MountSurface Mount, Wettable Flank
Package / Case
10-TFDFN Exposed Pad48-VFQFN Exposed Pad
Supplier Device Package
PG-TSON-10-2PG-VQFN-48-31
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
PG-VQFN-48-31
TLE92108232QXXUMA1
IC GATE DRVR HALF-BRIDGE 48VFQFN
Infineon Technologies
792
In Stock
1 : ¥36.98000
Cut Tape (CT)
2,500 : ¥18.55584
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
6V ~ 28V
-
100mA, 100mA
Non-Inverting
950 V
-
-
-
-
Surface Mount
48-VFQFN Exposed Pad
PG-VQFN-48-31
TLF11251LDXUMA1
TLF11251LDXUMA1
IC GATE DRVR HALF-BRIDGE 10TDFN
Infineon Technologies
11,883
In Stock
1 : ¥23.38000
Cut Tape (CT)
5,000 : ¥9.82103
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Single
1
N-Channel, P-Channel MOSFET
2.35V ~ 7V
2.31V, 4.69V
2.5A, 2.5A
Non-Inverting
-
60ns, 60ns
-40°C ~ 150°C (TJ)
Automotive
AEC-Q100
Surface Mount, Wettable Flank
10-TFDFN Exposed Pad
PG-TSON-10-2
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Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.