FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

BSL308PEH6327XTSA1 MOSFET 2P-CH 30V 2A TSOP6-6 Infineon Technologies	6,967 In Stock	1 : ¥8.29000 Cut Tape (CT) 3,000 : ¥2.03650 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate, 4.5V Drive	30V	2A	80mOhm @ 2A, 10V	1V @ 11µA	5nC @ 10V	500pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
IRF9358TRPBF MOSFET 2P-CH 30V 9.2A 8SO Infineon Technologies	16,023 In Stock	1 : ¥9.85000 Cut Tape (CT) 4,000 : ¥4.06106 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	9.2A	16.3mOhm @ 9.2A, 10V	2.4V @ 25µA	38nC @ 10V	1740pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTTFD4D0N04HLTWG MOSFET 2N-CH 40V 15A/60A 12WQFN onsemi	2,950 In Stock 3,000 Factory	1 : ¥15.19000 Cut Tape (CT) 3,000 : ¥6.83751 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	15A (Ta), 60A (Tc)	4.5mOhm @ 10A, 10V	2V @ 50µA	18nC @ 10V	1100pF @ 20V	1.7W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.