FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

NX1029X,115 MOSFET N/P-CH 60V 0.33A SOT666 Nexperia USA Inc.	6,758 In Stock	1 : ¥3.28000 Cut Tape (CT) 4,000 : ¥0.72008 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	60V, 50V	330mA, 170mA	7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 5V	36pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-563, SOT-666	SOT-666
DMC2025UFDBQ-7 MOSFET N/P-CH 20V 6A/3.5A 6UDFN Diodes Incorporated	2,233 In Stock 84,000 Factory	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.98717 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel Complementary	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.