FET, MOSFET Arrays

Results: 2
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Configuration
2 N-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
60V60V, 50V
Current - Continuous Drain (Id) @ 25°C
330mA, 170mA40A
Rds On (Max) @ Id, Vgs
10mOhm @ 10A, 10V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.35nC @ 5V30.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
36pF @ 25V2163pF @ 25V
Power - Max
500mW64W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Qualification
AEC-Q100AEC-Q101
Package / Case
SOT-1205, 8-LFPAK56SOT-563, SOT-666
Supplier Device Package
LFPAK56DSOT-666
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT666
NX1029X,115
MOSFET N/P-CH 60V 0.33A SOT666
Nexperia USA Inc.
6,508
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥0.72006
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
60V, 50V
330mA, 170mA
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35nC @ 5V
36pF @ 25V
500mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-563, SOT-666
SOT-666
LFPAK56D
BUK7K13-60EX
MOSFET 2N-CH 60V 40A LFPAK56D
Nexperia USA Inc.
2,581
In Stock
1 : ¥12.31000
Cut Tape (CT)
1,500 : ¥5.82771
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
60V
40A
10mOhm @ 10A, 10V
4V @ 1mA
30.1nC @ 10V
2163pF @ 25V
64W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q100
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.