FET, MOSFET Arrays

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V40V
Current - Continuous Drain (Id) @ 25°C
250mA18.2A
Rds On (Max) @ Id, Vgs
24mOhm @ 5A, 10V1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.3nC @ 5V6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
33pF @ 5V701pF @ 25V
Power - Max
272mW32W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Qualification
AEC-Q100AEC-Q101
Package / Case
6-TSSOP, SC-88, SOT-363SOT-1205, 8-LFPAK56
Supplier Device Package
LFPAK56DSC-88/SC70-6/SOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-363
NVTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SC88
onsemi
464,267
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.61037
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
250mA
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
LFPAK56D
BUK9K25-40EX
MOSFET 2N-CH 40V 18.2A LFPAK56D
Nexperia USA Inc.
8,177
In Stock
1 : ¥7.06000
Cut Tape (CT)
1,500 : ¥3.10681
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
40V
18.2A
24mOhm @ 5A, 10V
2.1V @ 1mA
6.3nC @ 5V
701pF @ 25V
32W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q100
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.