FET, MOSFET Arrays

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.onsemi
Series
-AlphaMOS
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C
250mA22A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs
4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.3nC @ 5V15nC @ 4.5V, 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
33pF @ 5V1075pF @ 15V, 5560pF @ 15V
Power - Max
272mW24W, 75W
Package / Case
6-TSSOP, SC-88, SOT-3638-VDFN Exposed Pad
Supplier Device Package
8-DFN (5x6)SC-88/SC70-6/SOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-363
NTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SC88
onsemi
113,670
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.79156
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
250mA
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
8-DFN
AOE6930
MOSFET 2N-CH 30V 22A/85A 8DFN
Alpha & Omega Semiconductor Inc.
2,705
In Stock
1 : ¥17.65000
Cut Tape (CT)
3,000 : ¥7.94005
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
22A (Tc), 85A (Tc)
4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
2.1V @ 250µA, 1.9V @ 250µA
15nC @ 4.5V, 65nC @ 4.5V
1075pF @ 15V, 5560pF @ 15V
24W, 75W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.