FET, MOSFET Arrays

Results: 4
Manufacturer
Nexperia USA Inc.Texas InstrumentsToshiba Semiconductor and StorageVishay Siliconix
Series
-NexFET™PowerPAIR®, TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 N-Channel (Half Bridge)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V60V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)170mA (Ta)15A30A, 40A
Rds On (Max) @ Id, Vgs
9.5mOhm @ 15.6A, 10V16.3mOhm @ 8A, 8V4Ohm @ 10mA, 4V4.5Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 100µA1.5V @ 250µA1.9V @ 250µA2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V5nC @ 4.5V19nC @ 10V-
Input Capacitance (Ciss) (Max) @ Vds
8.5pF @ 3V20pF @ 30V564pF @ 15V760pF @ 15V
Power - Max
200mW (Ta)325mW4W16.7W, 31W
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Package / Case
5-LGA6-TSSOP, SC-88, SOT-3638-PowerWDFN
Supplier Device Package
5-PTAB (3x2.5)6-TSSOP8-Power33 (3x3)US6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT363
NX138AKSX
MOSFET 2N-CH 60V 0.17A 6TSSOP
Nexperia USA Inc.
7,823
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52986
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
60V
170mA (Ta)
4.5Ohm @ 170mA, 10V
1.5V @ 250µA
1.4nC @ 10V
20pF @ 30V
325mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
CSD87381PT
CSD87381P
MOSFET 2N-CH 30V 15A 5PTAB
Texas Instruments
12,654
In Stock
1 : ¥7.64000
Cut Tape (CT)
2,500 : ¥2.85291
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
Logic Level Gate
30V
15A
16.3mOhm @ 8A, 8V
1.9V @ 250µA
5nC @ 4.5V
564pF @ 15V
4W
-55°C ~ 150°C (TJ)
Surface Mount
5-LGA
5-PTAB (3x2.5)
14,321
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.36093
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
100mA (Ta)
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
8.5pF @ 3V
200mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
8-PowerWDFN
SIZ340DT-T1-GE3
MOSFET 2N-CH 30V 30A/40A 8PWR33
Vishay Siliconix
8,841
In Stock
1 : ¥7.31000
Cut Tape (CT)
3,000 : ¥3.01070
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
30V
30A, 40A
9.5mOhm @ 15.6A, 10V
2.4V @ 250µA
19nC @ 10V
760pF @ 15V
16.7W, 31W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
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of 4

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.