FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2N7002DW-TP MOSFET 2N-CH 60V 0.115A SOT363 Micro Commercial Co	1,217,824 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.39475 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	115mA	7.5Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDMQ8203 MOSFET 2N/2P-CH 100V/80V 12-MLP onsemi	0 In Stock Check Lead Time	1 : ¥12.73000 Cut Tape (CT) 3,000 : ¥5.75012 Tape & Reel (TR)	GreenBridge™ PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N and 2 P-Channel (Full Bridge)	Logic Level Gate	100V, 80V	3.4A, 2.6A	110mOhm @ 3A, 10V	4V @ 250µA	5nC @ 10V	210pF @ 50V, 850pF @ 40V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.