FET, MOSFET Arrays

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
-MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V40V
Current - Continuous Drain (Id) @ 25°C
2.9A30A (Tc)
Rds On (Max) @ Id, Vgs
27mOhm @ 6A, 10V123mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3nC @ 4.5V38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
220pF @ 15V1850pF @ 20V
Power - Max
650mW48W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Package / Case
6-VDFN Exposed PadPowerPAK® SO-8 Dual
Supplier Device Package
6-MicroFET (2x2)PowerPAK® SO-8 Dual
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
FDMAxxxxxZ
FDMA2002NZ
MOSFET 2N-CH 30V 2.9A 6MICROFET
onsemi
24,456
In Stock
1 : ¥6.24000
Cut Tape (CT)
3,000 : ¥2.37255
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
2.9A
123mOhm @ 2.9A, 4.5V
1.5V @ 250µA
3nC @ 4.5V
220pF @ 15V
650mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
PowerPAK® SO-8 Dual
SQJ500AEP-T1_GE3
MOSFET N/P-CH 40V 30A PPAK SO8
Vishay Siliconix
7,529
In Stock
1 : ¥12.72000
Cut Tape (CT)
3,000 : ¥5.25836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
N and P-Channel
-
40V
30A (Tc)
27mOhm @ 6A, 10V
2.3V @ 250µA
38.1nC @ 10V
1850pF @ 20V
48W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.